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5. The effect of Mg in solution-processed Zn-Sn-O for TFTs

The effect of Mg in solution-processed Zn-Sn-O for TFTs

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：asd08061

【摘 要】

：

We fabricated thin-film transistors (TFTs) with Mg-Zn-Sn-O (MZTO) active layer by solution process and investigated the effect of Mg addition on Zn-Sn-O (ZTO) TFT with varying mole ratio of Mg.

【作 者】

：

Hyun Soo Lim You Seung Rim Hyun Jae Kim 

【机 构】

：

School of Electrical and Electronic Engineering,Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Thin-film transistors (TFTs) Magnesium Zinc tin oxide solution process 

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论文部分内容阅读

We fabricated thin-film transistors (TFTs) with Mg-Zn-Sn-O (MZTO) active layer by solution process and investigated the effect of Mg addition on Zn-Sn-O (ZTO) TFT with varying mole ratio of Mg.

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