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5. Rapid thermal annealing for α-Si/metal/semiconductor waveguide for active control of surface plasmon

Rapid thermal annealing for α-Si/metal/semiconductor waveguide for active control of surface plasmon

来源 :The 4th Advances in Optoelectronics and Micro/nano-optics (A | 被引量 : 0次 | 上传用户：johndovl1

【摘 要】

：

　　The influence of Au/Ni-based ohmic contact formed on the lowly doped (7.3×1017cm-3,Zn-doped) InGaAsP films to active control of surface palsmon po-laritons

【作 者】

：

Hui Zhang Yicen Li Dao Hua Zhang Ting Mei 

【机 构】

：

Laboratory of Nanophotonic Functional Materials and Devices,Institute of Optoelectronic Material and

【出 处】

：

The 4th Advances in Optoelectronics and Micro/nano-optics (A

【发表日期】

：

2014年期

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论文部分内容阅读

　　The influence of Au/Ni-based ohmic contact formed on the lowly doped (7.3×1017cm-3,Zn-doped) InGaAsP films to active control of surface palsmon po-laritons (SPPs) propagation under various rapid thermal annealing (RTA) conditions has been studied.

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