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Thin-film photovoltaic devices based on chalcopyrite (CIGS) absorber layers follow the absorber-window heterojunction concept and show excellent efficiencies exceeding 20%[1,2].The window is commonly composed of three layers: CdS deposited from a chemical bath (CBD buffer), undoped sputtered ZnO (i-ZnO for shunt isolation), and highly conductive sputtered ZnO: Al (TCO for lateral current transport).