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  5. Structural and Electrical Properties of the Low-k SiOC(-H) Film Prepared with Plasma-Enhanced Atomic

Structural and Electrical Properties of the Low-k SiOC(-H) Film Prepared with Plasma-Enhanced Atomic

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：yuanyewyew
【摘 要】
：
SiOC(-H) thin films with low-dielectric-constant have been prepared by using plasma-enhanced atomic layer deposition.I-V and C-V characteristics of the SiOC(-H) films were measured for the meatal-insu
【作 者】
：
Chang Young Kim R. Navamathavan Chi Kyu Choi 
【机 构】
：
Nano Thin Film Materials Laboratory, Department of Physics, Cheju National University,Ara 1 Dong,Jej
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年9期
【关键词】
：
Low-k materials SiOC(-H) films PEALD UV treatment FTIR 
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SiOC(-H) thin films with low-dielectric-constant have been prepared by using plasma-enhanced atomic layer deposition.I-V and C-V characteristics of the SiOC(-H) films were measured for the meatal-insulator-semiconductor structure,Al/SiOC(-H)/p-Si(100),in order to study the behavior.
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