论文部分内容阅读
Effects of Bi Flux on the Properties of GaSbBi Films Grown by Molecular Beam Epitaxy
【机 构】
:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and
【出 处】
:
第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain
【发表日期】
:
2016年11期
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