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使用电子束蒸发法在抛光Mo、石英和单晶硅衬底上沉积Ti薄膜,并用SPM、XRD及SEM对衬底及薄膜的表面形貌和微观结构进行了分析。结果表明:Ti膜的表面形貌和微观结构受衬底材料影响较大。抛光Mo衬底上的Ti膜表面有微小起伏,断面处发现Ti膜先在衬底形核,后以柱状颗粒的形式竖直向上生长;抛光石英衬底上的Ti膜表面平整,颗粒与界面清晰可见,在界面处有一层等轴晶;粗糙度最低的单晶硅基片上沉积的Ti膜表面反而最粗糙,通过XRD分析发现有TiSi_2的峰存在。
Ti films were deposited on polished Mo, quartz and monocrystalline silicon substrates by electron beam evaporation. The surface morphology and microstructure of the substrates and films were analyzed by SPM, XRD and SEM. The results show that the surface morphology and microstructure of Ti film are greatly influenced by the substrate material. The Ti film on the polished Mo substrate has a slight undulation on the surface, and the Ti film first nucleates on the substrate and grows upwardly in the form of columnar grains. The Ti film on the polished quartz substrate has a smooth surface and the interface between the grain and the interface It is clearly seen that there is a layer of equiaxed grains at the interface. The surface of the Ti film deposited on the single-crystal silicon substrate with the lowest roughness is actually the roughest, and the peak of TiSi 2 is found by XRD analysis.