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Thermal atomic layer deposited Al2 O3 thin films were applied at the front and rear sides of PERC-type C-Si solar cells.At the front side,A12 03/SiNχ as a double-layer antireflection coating reduced the reflection loss,and at the rear side.Al203 film as the passivation layer decreased the surface recombination velocity and enhanced the internal reflectance at near infrared band together with SiNχ layer.Due to the improvement in the reflectance combined with a decrease of the surfacerecombination velocity,the PERC solar cells show an improved Jsc by 0.2 mA/cm/ compared to the full-area back surface field solar cell.