Many of the initial problems encountered with the development of BiFeO3 as a ferroelectric or magnetoelectric material relate to its large conductivity and its high TC1-6.
液晶分子中合理地引入二氟乙烯基桥键，可以延长π-π电子的共轭长度、提高分子的双折射值(△n)、增宽向列相温度范围、改善液晶化合物的溶解性能以及降低旋转粘度(γ)1.
Germanium is a promising candidate to replace silicon in Nanoelectronics due to its significantly higher electron and hole mobilities1.However,the unstable germanium oxide formed at the interface betw
随着工农业的发展,湿度传感器已经成为监控环境的一项重要设备。因此,开发具有高灵敏度、快速响应和良好的重复性湿度传感器成为了关键[1]。目前,半导体材料作为潜在的高敏感的湿度材料受到了广泛的关注[2]。本论文采用静电纺丝法制备了单斜相的铌酸钠纳米纤维,SEM图显示纤维具有比较高的长径比,同时纳米纤维表面附有很多的细小颗粒,更进一步增强了它的比表面积。
The formation and temporal evolution of ferroelectric domain structures during the transition from the paraelectric P63/mmc to the ferroelectric P63cm phase is studied using computer simulation based
晶化是一种非平衡现象，在自然界、凝聚态物理和材料科学领域中普遍存在。从原子尺度理解液体的晶化机制仍然是一个挑战。晶化在大块非晶合金的制备中尤为关键，因为即使是玻璃形成能力最好的合金液体，晶化的介入要比普通高分子和二氧化硅液体中快几个数量级，因此，极大地影响着金属合金的玻璃形成能力和力学性能。到目前为止，大量的实验研究从热力学角度认识和理解合金过冷液体的晶化机制，然而，很少有研究从原子尺度关注晶化的
含氮的Ⅲ-Ⅴ族合金InxGa1-xN,由于其在光电器件、高密度光数据存储的、高功率转换方面的应用,受到了广泛关注。为了解释能带随合金成分的变化特性,我们采用基于密度泛函理论的第一原理方法,研究了半导体材料InxGa1-xN的电子结构、能带结构和能带Bowing参数。
The eg-orbital double-exchange mechanism as the core of physics of colossal magnetoresistance(CMR)manganites is well known,which usually covers up the role of super-exchange at the t2g-orbitals.
Electrolyte gating with ionic liquid has attracted significant attention as a powerful tool for greatly modulating the physical properties in a variety of materials.However,for electrolyte gating in t
Multiferroics,which exhibit more than one primary ferroic order parameters stimultaneously,has been extensively studied in recent years due to the abundant potential applications in information storag