This paper will present the simple process for the deposition of zinc oxide(ZnO)thin film on the silicon wafer using atmospheric pressure plasma technique.Precursor,dry powder Zinc acetylacetonate hydrate,was directly heating as vapour combining with the carrying gas Argon to spray into downstream of Nitrogen plasma jet for the deposition of ZnO thin film.The temperature of the substrate was not over 300℃.The power and frequency were maintained as 500W and 25kHz,respectively.XRD Rigaku 2200 was used to characterize the diffraction patterns of ZnO thin films.Major peak at 34° of the hexagonal wurtzite structure ZnO were clearly observed.Surface morphology and thickness of the film was evaluated by scanning electron microscopy(SEM)JEOL JSM-6500F.