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GaSb-based AlGaAsSb/InGaSb type-Ⅰ quantum-wells 2 μ m laser diodes(LDs)have been grown by MBE system.Stripe-type wave guide single LDs(single emitter)with HR/AR coatings were fabricated.For single LD(single emitter) device, the maximum output power under continuous wave(CW) operation is 1.058 Wunder working temperature of 15 ℃with a threshold current density of 88.1A/cm2 and a slope efficiency of 311.96m W/A, the output power under pulse mode of 1000Hz in5% dutycy cles is2.278W.The maximum wall plug efficiency(WPE)is 20.2% and peak waveleng this 1.98 μ m when in jection current is 0.5A, and the WPE is still more than 7% when emitting 1.058W light power at 4.5A.