【摘 要】
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Most group III-NITRIDES for solid state lighting applications are grown by metal-organic chemical vapour deposition (MOCVD) and are based on the naturally occurring wurtzite phase of AlGaInN materials
【机 构】
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School of Physics and Astronomy University of Nottingham
论文部分内容阅读
Most group III-NITRIDES for solid state lighting applications are grown by metal-organic chemical vapour deposition (MOCVD) and are based on the naturally occurring wurtzite phase of AlGaInN materials,usually in the (0001) orientation.In this case the internal electric fields dominate the recombination processes and for green or deep UV emission this is a problem,I this talk I will outline an alternative growth process,molecular beam epitaxy (MBE),which can be used to provide the meta-stable zinc-blende phase of AlGaInN in the (001) orientation.In this case the electric fields,spontaneous and piezoelectric,are absent due to symmetry considerations.I will outline the growth process and give some examples of cases where MBE may be more suitable for the growth of such structures.
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