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5. Copper Alloy Gap-Filling of Nanoscale Trench by Cyclic Metallorganic Chemical Vapor Deposition

Copper Alloy Gap-Filling of Nanoscale Trench by Cyclic Metallorganic Chemical Vapor Deposition

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：CPhoenixEx

【摘 要】

：

The critical dimension in Si device technology has been constantly shrunk.At the same time the aspect ratio of Cu trenches or via holes increases.

【作 者】

：

H.K. Moon S.J. Lee J.H. Lee J. Yoon 

【机 构】

：

School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 440-7

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Gap-filling Alloy Interconnect 

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The critical dimension in Si device technology has been constantly shrunk.At the same time the aspect ratio of Cu trenches or via holes increases.

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