The development of silicon carbide (SiC) crystal growth technology over the last decade has brought about tremendous progress in SiC power semiconductor devices.150 mm diameter SiC epitaxial wafers with a low dislocation density have already been brought to market,and 200 mm diameter 4H-SiC substrates were successfully demonstrated at the International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015) held in Giardini Naxos in Italy in October this year.