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Using a simple model potential and the closed orbit theory,we study the photodetachment of H-near a dielectric-covered metal surface.The photodetachment cross sections of this system have been calculated.The results show the chemisorption of a dielectric thin layer on the metal surface can affect the photodetachment of negative ion greatly.Compared to the photodetachment of hydrogen negative ion near a clean metal surface,the chemisorption effect of a thin dielectric layer makes the oscillation structure in the photodetachment cross section becomes strengthened.For a given dielectric thin layer,with the increase of its thickness,the oscillating amplitude of the cross section becomes increased.If we fix the thickness of the layer and vary the dielectric constant,we find the oscillating amplitude of the cross section is varied accordingly.Besides,the chemisorption effect of a thin dielectric layer on different metal surfaces can also influences the photodetachment cross section of H-.This study will guide the future experiment study on the chemisorption effect of the photodetachment of negative ion in the presence of dielectric-covered metal surfaces.