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In this report,with solid source molecular beam epitaxy technique,Si1-xGex (SiGe) virtual substrates were deposited on low-temperature-grown Si (LT-Si) buffer layer,which was doped with B or Sb.The strain in SiGe virtual substrate was characterized by high resolution X-ray diffraction and Raman measurement.Results indicated that Sb- or B-doping in LT-Si can effectively modulate the degree of strain relaxation in SiGe virtual substrate.