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5. Effect of annealing and plasma oxidation on the resistivity of phosphorous- doped poly crystalline s

Effect of annealing and plasma oxidation on the resistivity of phosphorous- doped poly crystalline s

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：tjhaixin2

【摘 要】

：

The effects of annealing and plasma oxidation on phosphorus-doped poly-silicon layers were studied in this work.Plasma oxidation resulted in reduced poly-Si thickness and reduced phosphorous dopant co

【作 者】

：

Jinhyung Park Jaihyung Won Hyeondeok Lee Heeyeop Chae 

【机 构】

：

TC Technology Group, Samsung Electronics Co. Ltd., Yongin, 446-711, Republic of Korea

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Poly-Si plasma oxidation O2-plasma phosphorous doping crystalline grain growth s 

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The effects of annealing and plasma oxidation on phosphorus-doped poly-silicon layers were studied in this work.Plasma oxidation resulted in reduced poly-Si thickness and reduced phosphorous dopant concentration due to surface oxidation of poly-Si and out-diffusion of phosphorous.

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