论文部分内容阅读
For application in space environments,the effect of 1-MeV electron irradiation on waferbonded GaInP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all solid state molecular beam epitaxy was studied.After exposure to 1-MeV electron irradiation at 1×15 e/cm2,an end of life remaining factor of approximately 85%was obtained.The wafer bonding interface was studied by spectral response and transmission electron microscopy.1-MeV electron irradiation was conducted on the individual InGaAsP and InGaAs single junction cell,respectively.The degradation of the four-junction cell was mainly due to damage on the InGaAsP and InGaAs subcells rather than the bonding interface.