Light-emitting Diodes on Si (110) Substrate

来源 :第十届中国国际半导体照明论坛 | 被引量 : 0次 | 上传用户：luyunlongal1127

【摘要】

：

We study the morphologies,material properties,andoptical characteristics of an InGaN/GaN QW lightemittingdiode (LED) structure grown on a -oriented one-dimensional trench-patterned Si (110)substrate w

【作者】

：

Chih-Yen Chen Chieh Hsieh Wen-Ming Chang Yean-Woei Kiang C.C.Yang Horng-Shyang Chen Zhan Hui Liu Chun-Han Lin Chia-Ying Su Ta-Wei Chang Pei-Ying Shih Chung-Hui Chen Wang-Hsien Chou

【机构】

：

Institute of Photonics and Optoelectronics,National Taiwan University,1,Roosevelt Road,Section 4,Tai

【出处】

：

第十届中国国际半导体照明论坛

【发表日期】

：

2013年8期

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　　We study the morphologies,material properties,andoptical characteristics of an InGaN/GaN QW lightemittingdiode (LED) structure grown on a <1-10>-oriented one-dimensional trench-patterned Si (110)substrate with other samples of different trenchorientations on Si (110) substrate,flat Si (110) substrate,and Si (111) substrate are demonstrated.By comparingthe performances of the fabricated LEDs based on thethree samples of continuous top surfaces,it is found thatthe sample of <1-10>-oriented trench has the strongestoutput power,lowest device resistance,and smallestspectral shift range in increasing injection current.

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Light-emitting Diodes on Si (110) Substrate

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