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We study the morphologies,material properties,andoptical characteristics of an InGaN/GaN QW lightemittingdiode (LED) structure grown on a <1-10>-oriented one-dimensional trench-patterned Si (110)substrate with other samples of different trenchorientations on Si (110) substrate,flat Si (110) substrate,and Si (111) substrate are demonstrated.By comparingthe performances of the fabricated LEDs based on thethree samples of continuous top surfaces,it is found thatthe sample of <1-10>-oriented trench has the strongestoutput power,lowest device resistance,and smallestspectral shift range in increasing injection current.