Background, Motivation and Objective In this paper we present designs of an aluminum nitride (AlN) based mechanical stack for transmit/receive applications in silicon. By optimal design of the mechanical layer thicknesses and properties the channel gain, center frequency and bandwidth can be controlled to allow for the use lower gain and power electronics to conduct a number of on-chip ultrasonic information processing operations. Previously, we reported on the use of thin film AlN transducers on silicon chips for on-chip ultrasonic communication. Within all these applications it is important to design the mechanical structure to best couple acoustic energy from the transducer (AlN) to the channel (silicon). Though this is a classical design problem for NDE applications the frequency range (＞1GHz) and fabrication techniques (microfabrication) allow for a greater degree of freedom due to the precise control of thicknesses. The design choices for electrode materials is limited in order to maximize electromechanical coupling of the piezoelectric thin film. In this paper we present numerical modeling of the transducer stack, and experimental verification.