【摘 要】
：
This is an abstract which should not be less than 250 words.The scope of the ennference will cover Material Growth and Characterization (lll-Nitride,ZnO,GaAs and InP related,GeSi,Nano materials and so
【机 构】
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School of Physics and electronics, Henan University, Kaifeng, 475004, China
【出 处】
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第十七届全国化合物半导体材料微波器件和光电器件学术会议
论文部分内容阅读
This is an abstract which should not be less than 250 words.The scope of the ennference will cover Material Growth and Characterization (lll-Nitride,ZnO,GaAs and InP related,GeSi,Nano materials and so on),Electron Devices (High frequncy,high power),Optcelectronic Devices,and equipment,System and Applications.Please submit A4 size 4-page paper with both Word and PDF format to the email box of conference organization committee.
其他文献
氮化物和氧化物半导体材料及相关器件是目前国际上化合物半导体领域最活跃的研究方向。近期氮化物半导体材料的一个热点研究方向就是高In组份的GaInN材料和相关器件研究；用MBE方法生长了InN纳米材料和薄膜材料，并制备了电致发光器件，器件电致发光峰值在1.57微米左右，进一步证实了InN材料是一个窄带隙材料。近期氧化物半导体材料的一个热点和难点研究方向就是ZnO材料的p型掺杂和其紫外激光器件研究；用M
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