The authors have so far developed a loop type of inductively coupled thermal plasma(Ioop-ICTP) for large-area thermal plasma materials processings.Previously,we found that the Ioop-ICTP could be formed lying on the substrata surface,which can be used for laterally long surface modification[1].The present report describes the application of such the loop-ICTP to nitridation processing.The Ar/N2 Ioop-ICTP was formed on a titanium (Ti) substrate located downstream of the plasma torch.The fabricated nitride layer on the Ti substrate was analyzed by X-Ray Diffraction (XRD) method.