The effect of different buffers on the polycrystalline silicon(poly-Si) texturization was investigated The surface morphology and reflectance of poly-Si were analyzed by scanning electron microscope (SEM) and spectrum response system respectively.The experimental results showed that the surface etched by HF, HNO3, H3PO4, de-ionized water or HF, HNO3, H2SO4, de-ionized water was distributed with uniform earthworm-like etched-pits and very low reflectance.