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The anomalous Hall effect(AHE)in localization regime is investigated in Fe(001)(1 nm-3 nm)ultra-thin films epitaxial on MgO(001).
The Anomalous Hall Effect With Quantum Corrections In Fe(001)Ultra-thin Film Regime
【摘 要】
：
The anomalous Hall effect(AHE)in localization regime is investigated in Fe(001)(1 nm-3 nm)ultra-thin films epitaxial on MgO(001).
【机 构】
：
Department of Physics,State Key Laboratory of Surface Physics,Fudan University,Shanghai 200433
【出 处】
：
中国物理学会2015年秋季会议
【发表日期】
：
2015年期
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