【摘 要】
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In this paper,the characteristics of nitride-based blue light-emitting diodes (LEDs) with double superlattices are analyzed numerically.One of the superlatt
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In this paper,the characteristics of nitride-based blue light-emitting diodes (LEDs) with double superlattices are analyzed numerically.One of the superlattice is composed of InGaN/GaN,which is designed before the multiple quantum wells (MQWs).The other one is AlInGaN/AlGaN,which is inserted between last QB (quantum barriers) and p-GaN.The energy band diagrams,carrier concentrations in the quantum wells (QWs),internal quantum efficiency,light output power are investigated by APSYS software.The simulation results show that the LED with AlGaN double superlattices has better performance than its conventional InGaN/GaN counterpart owing to the increase of hole injection and the enhancement of electron confinement.The double superlattices can make the carriers tunneling to the MQWs easily,especially for the holes.In addition,the LED with the double superlattices can effectively suppress the electron overflow out of active region at the same time.The simulation results also suggest that the output power are enhanced significantly and the efficiency droop is markedly improved when the double superlattices are used.
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