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The solid reactions between Nickel and relaxed SiGe substrate are systematic investigated with different Al interlayer thicknesses.The morphology,composition and sheet resistance of the germanosilicide layers are investigated with different annealing temperature in the appearance of Al.The germanosilicide films were characterized by Rutherford backscattering spectrometry,crosssection transmission electron microscopy,Energy Dispersive X-ray spectrometer and Secondary Ion Mass Spectroscopy techniques.It is found that the incorporation of Al improves the surface and interface morphology and retards the Ni-rich germanosilicide phase to the mono-germanosilicide phase.Best results of Ni germanosilicide layers are achieved at 700℃ in the case of 3 nm Al interlayer.The orthorhombic NiSi0.7Ge0.3 is finally epitaxial grown on cubic Si0.7Ge0.3 substrate with the epitaxial orientation relationships of(101)NiSi0.7Ge0.3 ‖(001)Si0.7Ge0.3 and the NiSi0.7Ge0.3 film is in-plane rotated 45°.