Effect of PbO Seed Layer and LaNiO3 Buffer Layer on the Electrical Properties and Energy-Storage Per

来源 :The 5th International Congress on Ceramics, ICC5(第五届国际陶瓷大会) | 被引量 : 0次 | 上传用户：baobei_jing

【摘要】

：

　　High Curie-temperature(Tc)Bi(Ni1/2Ti1/2)O3-PbTiO3(BNT-PT)thin films near the morphotropic phase boundary(MPB)were successfully fabricated on Pt(111)/Ti/SiO2

【作者】

：

ZhenkunXie;ZhenxingYue;BinPeng;

【机构】

：

School of Materials Science and Engineering,Tsinghua University,Beijing,China

【出处】

：

The 5th International Congress on Ceramics, ICC5(第五届国际陶瓷大会)

【发表日期】

：

2014年期

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论文部分内容阅读

　　High Curie-temperature(Tc)Bi(Ni1/2Ti1/2)O3-PbTiO3(BNT-PT)thin films near the morphotropic phase boundary(MPB)were successfully fabricated on Pt(111)/Ti/SiO2/Si substrates with either PbO seed layer or LaNiO3 buffer layer through a chemical solution approach.The effects of PbO seed layers and LaNiO3 buffer layers on the microstructure,dielectric,ferroelectric properties,and energy-storage performances of the films were investigated in details.X-ray diffraction and scanning electron microscopy of the samples revealed that dense highly(100)-oriented BNT-PT thin films formed without apparent defects or secondary phases.

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