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High Curie-temperature(Tc)Bi(Ni1/2Ti1/2)O3-PbTiO3(BNT-PT)thin films near the morphotropic phase boundary(MPB)were successfully fabricated on Pt(111)/Ti/SiO2/Si substrates with either PbO seed layer or LaNiO3 buffer layer through a chemical solution approach.The effects of PbO seed layers and LaNiO3 buffer layers on the microstructure,dielectric,ferroelectric properties,and energy-storage performances of the films were investigated in details.X-ray diffraction and scanning electron microscopy of the samples revealed that dense highly(100)-oriented BNT-PT thin films formed without apparent defects or secondary phases.