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An axisymmetric mathematical model was established for millisecond pulsed Nd:YAG laserheating of silicon-based PIN Photodiode.The transient temperature fields was obtained by using the finiteelement method.The temperature dependences of the material parameters and the absorption coefficient weretaken into account in the calculation.The results indicate that the optical absorption coefficient and the thermalconductivity are the two key factors for the temperature evolution.The diffusion of boron in the liquid phaseand the introduction of deep level defects in the depletion region of the photodiode were the two reasons forthe millisecond laser-induced electrical degradation of the photodiode.The morphological damage thresholdand electrical degradation threshold of the photodiode was obtained numerically.Meanwhile,the influence ofthe antireflection coating,the doping concentration and the junction depth were also considered.The resultsshow that the morphological damage threshold decreases with adding an antireflection coating,the increase ofthe doping concentration and junction depth.The electrical degradation threshold increases only with thejunction depth.