【摘 要】
：
一种新奇的两步法本征(i)层生长工艺被应用来改善非晶硅/晶体硅(a-Si∶H/c-Si)界面钝化.研究了不同H2稀释流量比率R(R=[H2/SiH4])下的非晶硅薄膜的体材料的光电特性和其应用
【机 构】
：
南开大学电子信息与光学工程学院光电子薄膜器件与技术研究所,光电子薄膜器件与技术天津市重点实验室,光电信息技术科学教育部重点实验室,天津,300071
【出 处】
：
第13届全国博士生学术年会——新能源专题
论文部分内容阅读
一种新奇的两步法本征(i)层生长工艺被应用来改善非晶硅/晶体硅(a-Si∶H/c-Si)界面钝化.研究了不同H2稀释流量比率R(R=[H2/SiH4])下的非晶硅薄膜的体材料的光电特性和其应用于非晶硅/晶体硅界面钝化后的钝化效果之间的关系,并做了比较,结果表明对于钝化效果来说,非晶硅/晶体硅界面的影响是主要的,要大于非晶硅体材料特性的对钝化的影响.但是,在非晶硅/晶体硅界面没有出现外延生长的情况下,非晶硅薄膜的体材料特性会对钝化有显著的影响.优化后的两步法工艺设计如下:在本征层生长的初始阶段,H2稀释流量比率R要比非晶硅体材料生长所采用的比率要低,以保证界面处的非晶硅仍然处于非晶相,第二阶段用最优的非晶硅体材料生长工艺,以获得最佳质量的钝化薄膜.虽然在抛光的直拉单晶硅片仅用5纳米的非晶硅薄膜来钝化,得到的有效少子寿命却达到了1.7毫秒.退火后,少子寿命达到了2.5毫秒,与之相对应的暗含的开压理论值达到了0.724V.
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