Graphene and hexagonal boron nitride (h-BN) have similar crystal structures with a lattice constant difference of only 2%.However, graphene is a zero bandgap semiconductor with remarkable high carrier mobility at room temperature, whilst an atomically thin layer of h-BN is a dielectric with a wide bandgap of~5.9 eV.Additionally, single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics.