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在8℃、40V直流电压、0.3 mol/L的草酸电解液中,采用两步阳极氧化法用高纯度铝箔制备多孔阳极氧化铝(AAO)膜。用场发射扫描电子显微镜观察多孔阳极氧化铝膜的形貌。采用电化学交流阻抗法测量多孔阳极氧化铝膜制备过程中一次氧化和二次氧化后的电化学阻抗谱。试验结果表明,所制备的多孔阳极氧化铝膜为高度有序排列的纳米孔洞阵列。根据试验得到的电化学阻抗谱建立了R(QR)(QR)等效电路,该等效电路能较好地表征多孔阳极纳米氧化铝膜的电化学特性,进而找到了等效电路中电学元件与草酸电解液、多孔氧化铝膜的特性及界面电荷转移的关系。该研究有助于研究多孔阳极氧化铝膜的生长过程及形成机理。
Porous anodic aluminum oxide (AAO) films were prepared from high purity aluminum foil by two-step anodization at 8 ℃, 40V DC and 0.3 mol / L oxalic acid electrolyte. Morphology of porous anodic aluminum oxide films was observed by field emission scanning electron microscopy. Electrochemical Impedance Spectroscopy (EIS) was used to measure the electrochemical impedance spectroscopy (EIS) of porous anodic aluminum oxide (PAA) after primary oxidation and secondary oxidation. The experimental results show that the prepared porous anodic aluminum oxide film is a highly ordered array of nano-holes. The equivalent circuit of R (QR) (QR) was established based on the experimental electrochemical impedance spectroscopy. This equivalent circuit can characterize the electrochemical properties of the porous anodic nano-alumina film well, and then find the equivalent circuit of the electrical components Relationship with Oxalic Acid Electrolyte, Porous Alumina Membrane and Interfacial Charge Transfer. This study is helpful to study the growth process and formation mechanism of porous anodic aluminum oxide films.