This paper focuses on the light damage induced by nanosecond laser pulse with 1.06 μm wavelength at high repetition frequency in switch material.On the basis of the thermal conduction theory, the tran
Tunneling quantum dot infrared photodetector (QDIP) has been demonstrated to be able to reduce the dark current significantly [1].In this paper, we report an In0.4Ga0.6As/Al0.1Ga0.9As QDIP device with