1 Results Heterostructures,based on ternary CuInS(Se2) chalcogenides and related binary compounds (Cu2-xCh,CuCh,In2Ch3 and InCh; Ch=S,Se) are considered appear to be a matter of choice for producing promising optoelectronic devices.In the present work we propose and consider a very simple way for the formation of sulfide and selenide heterostructures.The main idea is assumes a novel two-stage method of synthesis and nonstoichiometry control for heterostructures of InxS(Se)1-x/Si,CuInS(Se)2/Si and InxS1-x/SiO2.At the first step the hete rostructure is synthesized and its crystallochemical and morphological features are determined.At the second step the fine adjusting of the film nonstoichiometry and its properties to the desired values is realized.K 1 Results Heterostructures, based on ternary CuInS (Se2) chalcogenides and related binary compounds (Cu2-xCh, CuCh, In2Ch3 and InCh; Ch = S, Se) are considered appear to be a matter of choice for producing promising optoelectronic devices. present work we propose and consider a very simple way for the formation of sulfide and selenide heterostructures. The main idea is assuming a novel two-stage method of synthesis and nonstoichiometry control for heterostructures of InxS (Se) 1-x / Si, CuInS ( Se) 2 / Si and InxS1-x / SiO2. At the first step the hete rostructure is synthesized and its crystallochemical and morphological features are determined. At the second step the fine adjustment of the film nonstoichiometry and its properties to the desired values ​​is realized .K