论文部分内容阅读
为了定量地分析GaAsMESFET的物理参数和几何参数对其电性能的影响,本论文计算了GaAsMESFET的直流Ⅰ-ⅴ特性、等效电路参数及高频性能。本论文从GaAs电子速度-电场的两段线性近似出发,考虑了栅下耗尽层向漏端及源端的延伸,通过编制计算机程序求解GaAsMESFET的沟道电流-电压方程,得到了器件等效电路参数和高频参数与器件几何参数和材料参数以及偏压的关系。作为实例,本文计算了栅长1μm左右、栅宽1.2mm的GaAs功率器件DX52的直流Ⅰ-Ⅴ特性和高频性能,与测试结果符合较好,这些计算方法能够用来作为器件设计的依据。
In order to quantitatively analyze the influence of GaAsMESFET’s physical and geometrical parameters on its electrical properties, this paper calculates the DC Ⅰ-ⅴ characteristics, equivalent circuit parameters and high-frequency performance of GaAsMESFET. Based on the two-stage linear approximation of GaAs electron velocity-electric field, we consider the extension of the depletion layer under the gate to the drain and the source. The channel current-voltage equation of the GaAsMESFET is solved by computer program, and the device equivalent circuit The relationship between the parameters and high-frequency parameters, the geometrical and device parameters of the device, and the bias voltage. As an example, I-V characteristic and high frequency performance of GaAs power device DX52 with a gate length of 1μm and a gate width of 1.2mm are calculated, which are in good agreement with the test results. These calculation methods can be used as a basis for device design.