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本文报告在700℃下液相外延生长的GaAs,Al_xGa_(1-x)As的镁掺杂特性.测量了母液中不同镁的原子比与外延生长的CaAs,Al_(0.53)Ga_(0.47)As的空穴浓度的关系,掺镁GaAs的空穴浓度与其迁移率的关系以及在77—300K温度范围内空穴浓度、迁移率与温度的关系.估算了700℃下镁在GaAs中的分配系数.
In this paper, the Mg doping properties of GaAs and Al_xGa_ (1-x) As grown by liquid phase epitaxy at 700 ℃ are reported.The atomic ratios of Mg and Al_ (0.53) Ga_ (0.47) As , The relationship between the hole concentration of magnesium-doped GaAs and its mobility, and the relationship between the hole concentration and mobility and temperature in the temperature range of 77-300K.The distribution coefficient of magnesium in GaAs at 700 ℃ .