近年来,微波晶体管有了很大的发展,在4千兆赫下噪声系数为2.5分贝的双极晶体管和在8千兆赫下噪声系数为3分贝的砷化镓场效应晶体管已达到实用阶段。另外,在大功率晶体管方面,4千兆赫5瓦,3千兆赫10瓦的器件业已获得。这些器件在制造技术上都使用了接近极限的技术,器件的进步不仅取决于设计技术,还与工艺技术的进步关系极大。今后的微波晶体管的进展考虑非采用亚微米加工那样的新的制造技术不可。 In recent years there has been a great development in microwave transistors, with bipolar transistors with a noise figure of 2.5 dB at 4 GHz and GaAs FETs with a noise figure of 3 dB at 8 GHz. In addition, in the area of ​​high-power transistors, 4 gigahertz 5-watt, 3 gigahertz 10-watt devices have been obtained. These devices are used in the manufacturing technology near the limit of technology, device advances depend not only on design technology, but also the progress of technology has a great relationship. Future advances in microwave transistors consider new manufacturing techniques that do not employ sub-micron processing.