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基于泊松方程和幸运电子模型,推出了适用于高压n型器件衬底电流(ISUB)的公式,并且为模拟和实验测量的结果所验证.普通n型低压器件的热载流子注入(HCI)效应和ISUB相关.因此,ISUB特征曲线的解释理论和基于理论的正确公式表述对于确保器件设计的可靠性尤为重要.高压器件的ISUB随栅极电压变化在峰值后再次升高.然而在普通低压器件的经典特征曲线中,ISUB仅呈现一个峰.高压器件的ISUB再次升高及其相关的可靠性问题成为新的研究热点.最广为接受的理论(Kirk effect)认为,ISUB再次升高是因为栅控沟道内的经典强电场区移动到沟道外n+漏极的边缘.本文与之不同,认为高压器件ISUB的再次升高并非因为经典强电场区的移动,而是因为在n+漏极边缘出现独立的强电场区,和经典强电场区同时并存,这就是双强电场模型.该双强电场模型仅有经典强电场的ISUB方程不适用于高压器件,新的ISUB方程也由此双强电场模型推导出来,公式与实验结果吻合.进一步地,双强电场模型引进了空穴在氧化层的陷落机制,解释了高压器件的热载流子注入效应.
Based on the Poisson equation and the lucky electron model, a formula suitable for high-voltage n-type device substrate current (ISUB) was introduced and verified by simulation and experimental measurements. Hot carrier injection (HCI ) ISUB correlation effect and ISUB Therefore, ISUB characteristic curve theory and theory-based formulation of the correct formula to ensure the reliability of the device design is particularly important ISUB high voltage device with the gate voltage changes again after the peak rise in the ordinary ISUB presents only a single peak in the low-voltage device’s classical characteristic curve, and ISUB is again a new research hotspot due to the rise of ISUB in high-voltage devices. The most accepted theory (Kirk effect) is that ISUB rises again Because the classical strong electric field in the gated channel is moved to the edge of the n + drain outside the channel.This paper is different from the previous one because it is not because of the movement of classical strong electric field, The emergence of an independent strong electric field at the edge, coexisting with the classical strong electric field, is the double-strong electric field model. The ISUB equation with classical strong electric field is not suitable for the high-voltage device The new ISUB equation is also deduced from this double-strong electric field model, and the formula is in good agreement with the experimental results.Furthermore, the double-strength electric field model introduces the mechanism of hole trapping in the oxide layer and explains the hot carrier injection effect.