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为了制作亚微米栅长的超高速GaAs LSI,研制了一种p型耗尽层隐埋在有源层下的新型SAINT FET。设计的p型层有效地抑制了在n~+自对准(SAINT)MESFET中会引起严重短沟道效应的衬底电流。因为由Be离子注入形成的整个p型层,都被与其上面n型沟道层对应的内建势所耗尽,因此,p型层不会增加寄生电容。p型层的杂质浓度由最佳运算速度所限制。减薄有效沟道厚度所造成的短沟道效应的减弱,使漏电流增加了一倍左右,并使环形振荡器的传输延迟时间缩短了60％,室温下获得的最大跨导为420mS/mm,最小延迟时间为9.9ps/门。
In order to fabricate an ultra-high-speed GaAs LSI with a sub-micron gate length, a novel SAINT FET with a p-type depletion layer buried beneath the active layer was developed. The designed p-type layer effectively suppresses the substrate current that causes severe short channel effects in n ~ + SAINT MESFETs. Since the entire p-type layer formed by the Be ion implantation is depleted by the built-in potential corresponding to the n-type channel layer above it, the p-type layer does not increase the parasitic capacitance. The impurity concentration of the p-type layer is limited by the optimum operation speed. Weakening the short channel effect caused by decreasing the effective channel thickness can double the leakage current and shorten the transmission delay of the ring oscillator by 60%. The maximum transconductance obtained at room temperature is 420mS / mm , The minimum delay time is 9.9ps / gate.