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为实现基于InP/InGaAsP材料的二维光子晶体结构低损伤、高各向异性的干法刻蚀,研究了对InP材料基于Cl2/BCl3气体的感应耦合等离子体刻蚀.从等离子体轰击使衬底升温的角度分析了刻蚀机理,发现离子轰击加热引起的侧蚀与物理溅射在侧壁再沉积之间处于平衡时可以得到高各向异性刻蚀,平衡点将随ICP功率增高而向偏压减小方向移动,从而在近203V偏压下得到陡直的侧壁.在优化气体组分后,成功实现了光子晶体结构高各向异性的低偏压刻蚀.
In order to realize low damage and high anisotropy dry etching of InP / InGaAsP-based two-dimensional photonic crystal structure, inductively coupled plasma etching of InP material based on Cl 2 / BCl 3 gas was studied. The mechanism of etching was analyzed from the perspective of bottom heating, and it was found that high anisotropic etching was obtained when the side etching caused by ion bombardment heating and physical sputtering were in equilibrium between sidewall redepositions. The equilibrium point will increase with the increase of ICP power The bias decreases in the direction of the shift resulting in steep sidewalls near a bias of about 203 V. After optimizing the gas composition, a high-anisotropy low-bias etch of the photonic crystal structure has been successfully achieved.