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采用数值模拟分析了双降场层SOI-LIGBT击穿电压与SOI层厚度和隔离SiO2层厚度的关系,分析了阳极短路面积比对器件正向压降、关断时间和正向转折电压的影响,并利用硅直接键合(SDB)技术研制出580V的阳极短路SOI-LIGBT,关断时间为250ns
The relationship between the breakdown voltage of SOI-LIGBT and the thickness of SOI layer and the thickness of isolated SiO2 layer in double down-field layer was analyzed by numerical simulation. The influence of anode short-circuit area ratio on the forward voltage drop, turn-off time and forward turn- And use the direct bonding of silicon (SDB) technology to develop a 580V anode short-circuit SOI-LIGBT, off time of 250ns