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提出在单片微波集成电路 (MMIC)中用多孔硅 /氧化多孔硅厚膜作微波无源器件的低损耗介质膜 .研究了厚度为 70μm的多孔硅 /氧化多孔硅厚膜在低阻硅衬底上的形成 ,这层厚膜增加了衬底的电阻率 ,减少了微波的有效介质损耗 .通过测量在低阻硅衬底上形成的氧化多孔硅厚膜上的共平面波导的微波特性 ,证明了在低阻硅衬底上用厚膜氧化多孔硅可以提高共平面传输线 (CPW)的微波特性
A low loss dielectric film using porous silicon / oxidized porous silicon thick film as microwave passive device in monolithic microwave integrated circuit (MMIC) is proposed.The porous silicon / oxidized porous silicon thick film with thickness of 70μm is studied in low resistance silicon liner The thickness of the thick film increases the resistivity of the substrate and reduces the effective dielectric loss of the microwave.By measuring the microwave characteristics of the coplanar waveguide on the oxidized porous silicon thick film formed on the low resistance silicon substrate, It has been demonstrated that the thick-film oxidized porous silicon can improve the microwave characteristics of coplanar transmission line (CPW) on low-resistivity silicon substrates