在国产第一台ＣＢＥ（Ｃｈｅｍｉｃａｌｂｅａｍｅｐｉｔａｘｙ）设备上，用ＧＳＭＢＥ（Ｇａｓｓｏｕｒｃｅｍｏｌｅｃｕｌａｒｂｅａｍｅｐｉｔａｘｙ）技术在国内首次研究了ＩｎＧａＡｓ／ＩｎＰ匹配和应变多量子阱超晶格材料的生长，用不对称切换方法成功地生长了高质量的匹配和正负应变超晶格材料，并用双晶Ｘ－射线衍射技术对样品进行了测试和分析．结果表明，我们在国产第一台ＣＢＥ设备上用ＧＳＭＢＥ技术采用非对称切换方法生长的超晶格材料质量很好． The first domestic CBE (Chemicalbeamepitaxy) equipment, with GSMBE (Gassourcemolecularbeamepitaxy) technology for the first time in China for InGaAs / InP matching and strain multiple quantum well superlattice material growth, asymmetric switching method successfully grown high quality Match and positive and negative strained superlattice materials, and the samples were tested and analyzed by dual-crystal X-ray diffraction. The results show that the quality of the superlattice materials grown by GSMBE technology using the asymmetric switching method is very good on the first domestic CBE equipment.