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采用有限元法对SiO2/Si掩埋光波导制备工艺中的应力变化进行了系统的分析,在此基础上,应用有限差分束传播法(FDBPM)对应力光波导的双折射进行了计算.结果表明上包层的玻璃化过程是SiO2/Si波导形成水平方向和垂直方向应力差的主要原因,相应的应力双折射系数B在10-4量级.进一步的分析表明上包层B,P重掺杂可明显减小波导的双折射系数.
The finite element method is used to analyze the stress changes in SiO2 / Si buried optical waveguide fabrication process. Based on this, the birefringence of stress optical waveguide is calculated by finite difference beam propagation method (FDBPM) The vitrification of the upper cladding is the main reason for the formation of horizontal and vertical stress difference in SiO2 / Si waveguide, and the corresponding stress birefringence coefficient B is on the order of 10-4. Further analysis shows that the upper cladding B and P are heavily doped Miscellaneous can significantly reduce the birefringence of the waveguide.