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比较了典型双极、CMOS和CCD工艺中的内吸除。由于这三种工艺涉及到不同的处理温度、沾污程度和对硅片翘曲的敏感程度,直接的比较相当困难。此外,双极、CMOS和CCD电路的性能对结晶学缺陷的敏感程度也各不相同。因此,我们的比较是在一个相对的基础上进行的,重点在于沉淀的氧,沉淀分布和形貌以及提供最佳吸除行为的氧沉淀动力学的优化程度。为了成功地用内吸除来改善双极、CMOS和CCD电路的成品率,需要在每条工艺线和各个电路类型的基础上对这些参数进行优化。任何将氧沉淀数量增加至高于最佳值的企图都将导致成品率下降。引起成品率降低的原因有:缺陷形貌的变化(偏离最佳吸除),残余表面缺陷数量的增加和硅片的机械强度降低(边缘位错的产生、翘曲)。
Compared with the typical bipolar, CMOS and CCD technology in the suction. As these three processes involve different processing temperatures, the degree of contamination and the degree of sensitivity to silicon warpage, the direct comparison is quite difficult. In addition, bipolar, CMOS and CCD circuit performance sensitivity of crystallographic defects are also different. Therefore, our comparison is based on a relative basis, focusing on the optimal oxygen precipitation, the distribution and morphology of the precipitates, and the kinetics of oxygen precipitation that provide optimal sorption behavior. In order to successfully improve the yield of bipolar, CMOS and CCD circuits with internal absorption, these parameters need to be optimized on a per-process and circuit-by-circuit basis. Any attempt to increase the amount of oxygen precipitation above the optimum will result in a decrease in yield. The reasons for the decrease of the yield are as follows: the change of the defect morphology (deviation from the optimum absorption), the increase of the number of residual surface defects and the decrease of the mechanical strength of the silicon wafer (edge dislocation generation and warpage).