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研究了980nm的垂直腔面发射激光器(VCSEL)欧姆接触技术.降低VCSEL的欧姆接触电阻,可有效地提高VCSEL的输出功率和延长其可靠性.P面采用高掺杂的P-GaAs/Ti/Pt/Au系统,N面采用N-GaAs/Ge/Au/Ni/Au系统,通过优化合金温度,得到了最佳优化合金温度为440℃,最低欧姆接触电阻值为0.04Ω,同时对比了440℃和450℃器件的输出功率和转换效率之间的对比关系.测试结果表明,440℃器件的欧姆接触电阻0.04Ω,峰值波长980.1nm,光谱的半高宽0.8nm,平行发散角θ‖15.2°,垂直发散角θ⊥13.5°,输出功率1.4W,转换效率最大值为14.4%,而450℃的器件欧姆接触电阻为0.049Ω,输出功率为1.3W,转换效率为12.8%.通过优化合金温度能有效地降低980nm的VCSEL欧姆接触电阻.
The VCSEL Ohmic contact technology is studied at 980nm.Improving the ohmic contact resistance of VCSEL can effectively increase the output power and prolong the reliability of the VCSEL.The P-plane adopts highly doped P-GaAs / Ti / Pt / Au system, and the N surface adopts the N-GaAs / Ge / Au / Ni / Au system. The optimum temperature is 440 ℃ and the lowest ohmic contact resistance is 0.04Ω by optimizing the alloy temperature. ℃ and 450 ℃ .The test results show that the ohmic contact resistance of the device at 440 ℃ is 0.04Ω, the peak wavelength is 980.1nm, the FWHM of the spectrum is 0.8nm, the parallel divergence angle θ‖15.2 °, the vertical divergence angle θ⊥ 13.5 °, the output power 1.4W, the maximum conversion efficiency of 14.4%, while the 450 ℃ device ohmic contact resistance of 0.049Ω, the output power of 1.3W, the conversion efficiency of 12.8% by optimizing the alloy Temperature can effectively reduce the VCSEL Ohm contact resistance of 980nm.