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根据改进的Thomas-Fermi-Dirac模型,分析了CoSi_2薄膜中本征应力的起源,证明了基体与薄膜的原子表面电子密度差是薄膜本征应力的来源。实验在Si(100)基体注入碳离子(C~+),然后沉积钴(Co)薄膜,再进行快速退火(Rapid Thermal Annealing,简称 RTA)形成二硅化钴(CoSi_2)薄膜,发现薄膜中的应力随C~+离子注入剂量的增加而减少,理论计算了由C~+离子注入引起的应力减小的数值,并与实验结果进行了比较。
According to the improved Thomas-Fermi-Dirac model, the origin of intrinsic stress in CoSi_2 thin films is analyzed, and the electron density difference between the substrate and the film is proved to be the source of intrinsic stress. Experiments were carried out on the Si (100) substrate by implanting carbon ions (C ~ +), then depositing a cobalt (Co) thin film and then performing rapid thermal annealing (RTA) to form a thin film of cobalt disilicide (CoSi_2) With the increase of C ~ + ion implantation dosage, the value of stress reduction caused by C ~ + ion implantation was calculated theoretically and compared with the experimental results.