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采用2维瞬态数字模拟器和电路代码,模拟了经受140MeV氪轰击的桑迪亚SRAM的SRAM单元的恢复时间,研究了在n~-和p~-沟道截止状态时对漏进行的轰击,得到了4个重要结果:轰击后的恢复时间与再生晶体管的驱动力密切相关,被轰击的截止态p~-沟漏-栅电容耦合将对带有反馈电阻的SRAM的恢复时间产生明显影响,恢复时间在直到0.4pC/μ的LET范围内与LET大致成线性关系,最后,在无反馈电阻器的桑迪亚SRAM内观察到了实验性的n~-沟单击事件扰动(SEU)。
A 2-D transient digital simulator and circuit code were used to simulate the recovery time of the SRAM cell of the Sandia SRAM subjected to the 140MeV Krypton bombardment. The bombardment of the drain during n ~ - and p ~ - channel cutoffs was studied , Four important results are obtained: the recovery time after the bombardment is closely related to the driving force of the regenerative transistor, and the intercepted p ~ -drain-drain-gate capacitive coupling bombarded will have a significant effect on the recovery time of the SRAM with the feedback resistor , The recovery time is approximately linear with LET over the LET range up to 0.4 pC / μ, and finally, experimental n-channel click event disturbances (SEU) are observed within the Sandia SRAM without feedback resistors.