论文部分内容阅读
在功率GaAs MESFET及其放大器迅速发展的今天,人们已不再满足于仅利用均匀的有源层掺杂分布模型对器件的基本特性进行分析,以及利用近似均匀分布的GaAs材料来制作功率GaAs MESFET。研究非均匀有源层掺杂分布对GaAs MESFET性能的影响已有一些报道。人们对正斜率型、负斜率型、高斯型的有源层分布进行了比较,并采用分析模型对高斯型分布器件的直流I—V特性作了分析。结果表明:改善器件跨导g_m的均匀性,能够提高GaAs MESFET大信号应用时的输出信号线性度。对于低噪声器件,均匀的跨导能使器件获得更低的噪声。因此,研究有源层掺杂分布对于改善功率GaAs MESFET的线性问题意义十分重大。
With the rapid development of power GaAs MESFET and its amplifier, people no longer satisfied with the analysis of the basic characteristics of the device using only a uniform active-layer doping distribution model, and the power GaAs MESFET is fabricated by using an approximately uniformly distributed GaAs material . The influence of heterogeneous active layer doping distribution on the performance of GaAs MESFET has been reported. The positive slope, negative slope and Gaussian distributions of active layers are compared and the DC I-V characteristics of Gaussian distribution devices are analyzed by using analytical models. The results show that improving the uniformity of the transconductance gm can improve the linearity of the output signal when a large signal of GaAs MESFET is used. For low noise devices, a uniform transconductance allows the device to achieve lower noise. Therefore, studying the active layer doping profile is of great significance for improving the linearity of power GaAs MESFETs.