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采用射频磁控溅射技术在石英衬底上制备ZnO∶In薄膜,以N离子注入的方式进行N掺杂,通过优化退火条件成功实现了ZnO∶In-N薄膜的p型转变。研究发现:在590℃退火20min获得性能良好的p-ZnO∶In-N薄膜,其空穴浓度、迁移率和电阻率分别为(1.01×1018)cm-3、3.40cm2.V-1.s-1、1.81Ω.cm。结合XPS分析认为ZnO∶In-N实现p型导电正是由于In的掺入与受主N形成了有利于p型导电的受主InZn-2NO复合体。Hall跟踪测试发现p型导电会随时间变化而最终转变为n型导电,结合XPS和第一性原理计算认为薄膜中存在残余应力和(N2)O施主缺陷是p型不稳定的原因。
The ZnO: In thin film was deposited on a quartz substrate by radio frequency magnetron sputtering and N doped by N ion implantation. The p type transformation of ZnO: In-N thin film was successfully achieved by optimizing the annealing conditions. It was found that the p-ZnO: In-N thin films with good properties were annealed at 590 ℃ for 20min, their hole concentration, mobility and resistivity were (1.01 × 1018) cm-3,3.40cm2.V-1.s -1,1.81 Ω.cm. In combination with XPS analysis, it is considered that ZnO: In-N achieves p-type conductivity because the In doped InZn-2NO complex with acceptor N forms the acceptor for p-type conductivity. Hall tracking test found that the p-type conductivity changes with the passage of time and eventually changes to n-type conductivity. Combined with XPS and first-principles calculations, it is considered that the residual stress in the film and the (N2) O donor defect are the causes of p-type instability.