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对于平面型硅双极晶体管,在发射区和基区表面杂质浓度较高和发射结表面界面态密度较大时,电流增益的减少以及其随温度下降而减小的物理原因是载流子经由发射结表面禁带中局域态的隧道效应。同时指出了提高硅双极扩散平面晶体管的小电流时的电流增益和使其随温度变化缓慢的途径。
For a planar silicon bipolar transistor, the reduction of the current gain and its decrease with decreasing temperature due to the higher impurity concentration at the emitter and base surfaces and the higher density of states at the emitter junction interface are due to the carrier Tunneling Effect of Localized States in Surface Gap of Emitter. At the same time, it is pointed out that the current gain and the way to make it change slowly with the temperature when the silicon Bipolar Diffused Planar Transistor is small current are pointed out.