由于碲镉汞单晶在熔体生长中比较难于获得符合化学计量比的晶体,常常由于晶体的组份不均匀性和晶体结构的不完整性造成器件研制工艺的困难。碲镉汞晶体组份的不均匀性及结构不完整性主要是由于在晶体生长中的高汞压以及赝二元系固液相线的距离宽所致。为了克服上述困难,近年来国外连续发表了有关液相外延生长碲镉汞的方法,同时发表了有关富碲三元系碲镉汞液相外延研究工作,并报导了有关富碲角碲镉汞相图的资料。在富碲角相图的研究中最先应该解决的是富碲碲镉汞合金的凝固点的测量问题。正如我们在发表赝二元系碲镉汞相图前曾对碲镉汞合金材料的熔点进行测定一样,这个问题的解决对富碲碲镉汞相图研究同样是个 Due to the difficulty of obtaining stoichiometry-related crystals in the growth of the melt, the cadmium telluride single crystals often have difficulty in the device development process due to the compositional heterogeneity of the crystal and the incompleteness of the crystal structure. The inhomogeneity and structural imperfections of the HgCdTe crystal are mainly due to the high mercury pressure in the crystal growth and the wide distance between the pseudobinary system and the solid-liquid phase. In order to overcome these difficulties, in recent years, foreign countries have continuously published methods for the liquid-phase epitaxial growth of HgCdTe. At the same time, they published the research about the liquid phase epitaxy of the tellurium-tellurium-mercury-rich ternary system and reported on the HgTe Phase diagram of the information. The first problem to be solved in the phase diagram of tellurium tellurium is the measurement of the solidification point of the tellurium telluride-cadmium amalgam. Just as we measured the melting point of a tellurium-cadmium amalgam material prior to the publication of the pseudo-binary HgCdTe phase diagram, the solution to this problem was also true of the phase diagram of the tellurium-rich tellurium-cadmium telluride